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This paper investigates the psychological traits of individuals’ attraction to engaging in hacking behaviors (both ethical and illegal/unethical)upon entering the workforce.We examine the role of the Dark Triad, Opposition to Authority and Thrill-Seeking traits as regards the propensity of an individual to be interested in White Hat, Black Hat,and Grey Hat hacking. A new set of scales were developed to assist in the delineation of the three hat categories. We also developed a scale to measure each subject’s perception of the probability of being apprehended for violating privacy laws. Engaging in criminal activity involves a choice where there are consequences and opportunities, and individuals perceive them differently, but they can be deterred if there is a likelihood of punishment,and the punishment is severe. The results suggest that individuals that are White Hat, Grey Hat and Black Hat hackers score high on the Machiavellian and Psychopathy scales. We also found evidence that Grey Hatters oppose authority, Black Hatters score high on the thrill-seeking dimension and White Hatters, the good guys, tend to be Narcissists. Thrill-seeking was moderately important for White Hat hacking and Black hat hacking. Opposition to Authority was important for Grey Hat hacking. Narcissism was not statistically significant in any of the models. The probability of being apprehended had a negative effect on Grey Hat and Black Hat hacking. Several suggestions will be made on what organizations can do to address insider threats. 

Properties of a double-period InAs/GaSb superlattice grown by solid-source molecular beam epitaxy are presented. Precise growth conditions at the InAs/GaSb heterojunction yielded abrupt heterointerfaces and superior material quality as verified by X-ray diffraction and transmission electron microscopy (TEM) analysis. Moreover, high-resolution TEM imaging and elemental composition profiling of the InAs/GaSb heterostructure demonstrated abrupt atomic transitions between each Sb- or As-containing epilayer. An 8 × 8 k · p model is used to compute the electronic band structure of the constituent long- and short-period superlattices, taking into account the effects of conduction and valence band mixing, quantum confinement, pseudomorphic strain, and magnetic field on the calculated dispersions. Magnetotransport measurements over a variable temperature range (390 mK to 294 K) show anisotropic transport exhibiting a striking magnetoresistance and show Shubnikov-de Haas oscillations, the latter being indicative of high quality material synthesis. The measurements also reveal the existence of at least two carrier populations contributing to in-plane conductance in the structure.